Beskrivelse
N – CHANNEL 2.5A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V FQPF4N90C FQP4N90 4N90 TO-220F. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
FQPF4N90_FSC
FQPF4N90C N-mosfet
kr 18,95 inkl. mva.
N – CHANNEL 2.5A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V FQPF4N90C FQP4N90 4N90 TO-220F. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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