2SK3564 N-mosfet

Beskrivelse

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)

Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.6 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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